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COMPANY
| HISTORY |
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| 1982 |
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The forerunner of Sirectifier Semiconductors formed
by several local companies spread in Germany and France |
Power Module: 1994
Analog ICs: 1997
TO-220 & TO-247: 2000
Axial Lead: 2000
SMA/B/C: 2001
D-PAK: 2002
SOT-227: 2003
SOT-23-6: 2004
SOT-363: 2005
TO-126: 2006
ESD Protection Device: 2007
PWM Controller: 2007
By-Pass Diode: 2008
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Sirectifier Semiconductor: 1982
AIAC, Philippines: 1998
Sirectifier, Taipei, Taiwan: 2001
PSI, Virginia, U.S.A.: 2001
SGC, Delaware, U.S.A.: 2005
Halogen-Free: 2009
MOSFET 75N75: 2009
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| 1987 |
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Sirectifier Global Corp.(SGC) founded |
| 1992 |
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Fabless design house and wafer sales |
| 1994 |
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Develop Power Module |
| 1997 |
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Sirectifier Semiconductors founded in Europe
Develop Analog ICs |
| 2000 |
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Cooperated with Action Integrated Asia Corp. (AIAC), manila Philippine in strategy for the wafer sales and assembly
Develop power package TO-220 and TO-247 for Diode, SCR, MOSFETs
and IGBTs |
| 2001 |
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Marketing, Sirectifier Electronic Co., Ltd.,
founded in Taiwan
Cooperated with PowerSilicon Inc.(PSI), Sterling, Virginia,
U.S.A in strategy for development
Registered the “SIRECT” brand as our trademark |
| 2002 |
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Operated under ISO9002:2000 system
Develop planar process Schottky devices
Develop Platinum (Pt) Barrier extremely low IR Schottky
Develop Non Punch Through (NPT) IGBTs
Develop power MOSFETs |
| 2003 |
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Assembly for Micro-semi of Schottky
Cooperated with Chenmko Enterprise, Taiwan, to develop the “power-lite”
micro-SMD package
Develop Chromium (Cr) Barrier extremely low VF Schottky
Develop SOT-227 Power Module for FRED and Schottky |
| 2004 |
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Develop breakthrough PowerPak micro-SMD package
Registered the “ISI” brand as our trademark of the
SMD package |
| 2005 |
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Sirectifier Global Corp.(SGC), Delaware,
U.S.A. reorganized and become the global joint venture group
of the power semiconductors.
Marketing, Silicon Technology Ltd. founde in Shenzhen, China
Cooperated with D&I Semiconductor Co., Ltd., Korea, for
FRED, Schottky and MOSFETs.
Served to Flextronics with power semiconductors
Develop the patented package, “Free-wheel Diode”
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| 2006 |
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Development ESD protection devicess
Develop reformed isolation TO-126 package
Develop the QFN packages |
| 2007 |
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Develop EMI/ESD shielding device
Develop “ESD-PLUS” Schottkys from 6 up to 35KV
Develop PWM Controller
Develop Low VF Schottkys for “80 to 90 PLUS” of
CEC
Develop 200 - 400A, Schottkys & FRED module |
| 2008 |
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Develop “BY-PASS” Diode
for PV junction box of Solar Cell application |
| 2009 |
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Develop MOSFET "75N75"
for E-bike controller application.
Develop “Halogen-Free” Products
Develop Alloy Barrier 100V Low VF Schottkys for CEC level V
on the SMPS application.
All products conform to REACH requirement. |
