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COMPANY
| HISTORY |
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| 1982 |
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The forerunner of Sirectifier Semiconductors formed
by several local companies spread in Germany and France |
Power Module: 1994
Analog ICs: 1997
TO-220 & TO-247: 2000
Axial Lead: 2000
SMA/B/C: 2001
D-PAK: 2002
SOT-227: 2003
SOT-23-6: 2004
SOT-363: 2005
TO-126: 2006
ESD Protection Device: 2007
PWM Controller: 2007
By-Pass Diode: 2008
Sirectifier Electronic
Co., Ltd.
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Sirectifier Semiconductor: 1982
AIAC, Philippines: 1998
Sirectifier, Taipei, Taiwan: 2001
PSI, Virginia, U.S.A.: 2001
SGC, Delaware, U.S.A.: 2005
Halogen-Free: 2009
MOSFET 75N75: 2009
Sirectifier Electronic
Co., Ltd.
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| 1987 |
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Sirectifier Global Corp.(SGC) founded |
| 1992 |
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Fabless design house and wafer sales |
| 1994 |
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Develop Power Module |
| 1997 |
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Sirectifier Semiconductors founded in Europe
Develop Analog ICs |
| 2000 |
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Cooperated with Action Integrated Asia Corp. (AIAC), manila Philippine in strategy for the wafer sales and assembly
Develop power package TO-220 and TO-247 for Diode, SCR, MOSFETs
and IGBTs |
| 2001 |
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Marketing, Sirectifier Electronic Co., Ltd.,
founded in Taiwan
Cooperated with PowerSilicon Inc.(PSI), Sterling, Virginia,
U.S.A in strategy for development
Registered the “SIRECT” brand as our trademark |
| 2002 |
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Operated under ISO9002:2000 system
Develop planar process Schottky devices
Develop Platinum (Pt) Barrier extremely low IR Schottky
Develop Non Punch Through (NPT) IGBTs
Develop power MOSFETs |
| 2003 |
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Assembly for Micro-semi of Schottky
Cooperated with Chenmko Enterprise, Taiwan, to develop the “power-lite”
micro-SMD package
Develop Chromium (Cr) Barrier extremely low VF Schottky
Develop SOT-227 Power Module for FRED and Schottky |
| 2004 |
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Develop breakthrough PowerPak micro-SMD package
Registered the “ISI” brand as our trademark of the
SMD package |
| 2005 |
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Sirectifier Global Corp.(SGC), Delaware,
U.S.A. reorganized and become the global joint venture group
of the power semiconductors.
Marketing, Silicon Technology Ltd. founde in Shenzhen, China
Cooperated with D&I Semiconductor Co., Ltd., Korea, for
FRED, Schottky and MOSFETs.
Served to Flextronics with power semiconductors
Develop the patented package, “Free-wheel Diode” |
| 2006 |
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Development ESD protection devicess
Develop reformed isolation TO-126 package
Develop the QFN packages |
| 2007 |
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Develop EMI/ESD shielding device
Develop “ESD-PLUS” Schottkys from 6 up to 35KV
Develop PWM Controller
Develop Low VF Schottkys for “80 to 90 PLUS” of
CEC
Develop 200 - 400A, Schottkys & FRED module |
| 2008 |
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Develop “BY-PASS” Diode
for PV junction box of Solar Cell application |
| 2009 |
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Develop MOSFET "75N75"
for E-bike controller application.
Develop “Halogen-Free” Products
Develop Alloy Barrier 100V Low VF Schottkys for CEC level V
on the SMPS application.
All products conform to REACH requirement. |
| 2010 |
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Cooperated with POSKITZ Ltd., U.S.A. for the field of payment terminal.
Cooperated with Lingsen Precision Industrial, Taiwan, playing the role of one of our assembly in Asia.
Sirectifier Electronic Co., Ltd., Taiwan, moved to new address and expanded the business and service. |
